Abstract: We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO 2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source ...
Abstract: In this paper, we present a study on a retention characteristics dependent on a high-$\kappa $ gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer.