Abstract: A highly sensitive and stable temperature sensor based on a diamond-Ga2O3 Schottky-p-n diode is demonstrated in this work. The forward current exhibits a pronounced temperature dependence, ...
Abstract: We present a groundbreaking advancement in ultraviolet (UV) radiation detection technology through the fabrication of a novel (p+)BDD/(n)4H-SiC heterojunction Schottky barrier diode (HSBD).
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