It is the fastest, most efficient transistor ever,” a Peking University statement claims. That is a confidence boost for a ...

BorgWarner's Integrated Drive Modules (iDMs) are designed to be utilized in vehicles across various segments from A to D as ...

Engineers from Ohio State University are claiming to have opened the door to the fabrication of far smaller AlN/GaN HEMTs ...

Infineon Technologies is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, capable of actively blocking voltage ...

D transistor offering 40% faster speeds and lower energy use may soon disrupt the global chip market - if China can ...

Vishay Intertechnology, Inc.’s VSH share price has surged by 6.84%, which has investors questioning if this is right time to sell.

A new breakthrough in China could power the future of silicon-free chips, further revolutionizing how we make microprocessors ...

Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV ... the recoverable (and temperature dependent) current ...

First of all, it is important to know that the electricity flowing through Europe’s power grids is based on alternating current technology, meaning that the direction of the current reverses every ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...