News

It is the fastest, most efficient transistor ever,” a Peking University statement claims. That is a confidence boost for a ...
BorgWarner's Integrated Drive Modules (iDMs) are designed to be utilized in vehicles across various segments from A to D as ...
Engineers from Ohio State University are claiming to have opened the door to the fabrication of far smaller AlN/GaN HEMTs ...
Infineon Technologies is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, capable of actively blocking voltage ...
D transistor offering 40% faster speeds and lower energy use may soon disrupt the global chip market - if China can ...