EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
Hackaday

A Radio Power Amplifier For Not A Lot

When building a radio transmitter, unless it’s a very small one indeed, there’s a need for an amplifier before the antenna.
IEEE

Suppressing the Capacitive Coupling by Adjusting the Precharge Biasing Scheme in a Two-Transistor Dynamic Random-Access Memory Operation

Abstract: In this study, the impact of capacitive coupling (CC) caused by the parasitic capacitance components of metal-oxide semiconductor field effect transistors (MOSFETs) on the data stored in a ...
IEEE

Modeling of Static Back-Biasing Phenomena in GaN Bidirectional HEMT

Abstract: In this article modeling of back-biasing effects in Gallium Nitride (GaN) bidirectional high-electron-mobility transistors (HEMTs) is discussed. Specifically, static degradation of both ...