Constructed from five 2-D QYAs arranged in a cube and an RF harvester PCB base, the 3-D QYA considerably enhances the energy harvesting performance. Compared to its 2-D counterpart, the 3-D QYA ...

Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across automotive, data ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

announced the finalization of a strategic agreement with Renesas Electronics Corp. to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology. As part of this agreement, Polar will ...

SINGAPORE – Deputy Prime Minister Gan Kim Yong, in a surprise move, is leading the PAP against a WP team helmed by senior counsel Harpreet Singh for the new Punggol GRC. Ending days of ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

announced today the finalization of a strategic agreement with Renesas Electronics Corporation (“Renesas”) to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology.