Abstract: We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO 2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source ...
Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China, Department of Precision Machinery and Instrumentation, University of Science and ...
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