Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...

When wafer test data is limited, evaluating the process window for different integration schemes can be difficult. To overcome this limitation, we will discuss an example of how virtual fabrication ...

The latest project builds on an earlier extension of the IMEC program, which is its traditional logic- and SRAM-oriented work. The objective of the sub-program is to research high-k and metal gate ...

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ‘copy-paste’ of regular logic transistor process flows.

Samsung has reportedly seen its 6th-Gen DRAM yields jump from 0% to 40% which has given them the greenlight for next-gen HBM4 mass production.

Toshiba’s new 0.18-micron embedded DRAM process can now improve the performance of logic transistors and is 20% shorter than most embedded DRAM processes. Currently the process is still using an ...

--Micron Technology, Inc., today announced volume shipment of 1 α node DRAM products built using the world’ s most advanced DRAM process technology and offering major improvements in bit ...

Micron's 1γ fabrication technology with EUV, new HKMG, and BEOL promises to increase performance while cutting power consumption for DRAM.

Samsung's next-gen HBM4 mass production expected 'next year' as its 1c DRAM test yields reach 65%, bringing the AI memory fight to SK hynix and Micron.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM™. This development is the world's first 3D NAND-like DRAM cell array that is targeted to ...

"Microsoft's selection of the TSMC 90nm eDRAM process for the graphics-rich Xbox 360 is an important validation of the capability and maturity of the technology," said John Wei, senior director of ...