When wafer test data is limited, evaluating the process window for different integration schemes can be difficult. To overcome this limitation, we will discuss an example of how virtual fabrication ...

Samsung Electronics approves the mass production of its 6th-gen D1c DRAM, ready for HBM dies and will accelerate the development of HBM4 very soon.

The world’s most advanced DRAM process node, 1β represents an advancement of the company’s market leadership cemented with the volume shipment of 1α (1-alpha) in 2021.

The latest project builds on an earlier extension of the IMEC program, which is its traditional logic- and SRAM-oriented work. The objective of the sub-program is to research high-k and metal gate ...

Samsung's new five-layer EUV process enables the industry’s highest DRAM bit density, enhancing productivity by approximately 20% Based on the latest DDR5 standard, Samsung’s 14nm DRAM will be ...

--Micron Technology, Inc., today announced volume shipment of 1 α node DRAM products built using the world’ s most advanced DRAM process technology and offering major improvements in bit ...

Toshiba’s new 0.18-micron embedded DRAM process can now improve the performance of logic transistors and is 20% shorter than most embedded DRAM processes. Currently the process is still using an ...

Samsung has reportedly seen its 6th-Gen DRAM yields jump from 0% to 40% which has given them the greenlight for next-gen HBM4 mass production.

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ‘copy-paste’ of regular logic transistor process flows.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM™. This development is the world's first 3D NAND-like DRAM cell array that is targeted to ...