TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
A new technical paper titled “Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging” was published by researchers at ...
An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
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