NextBigFuture

BREAKTHROUGH CMOS N-Type Diamond Transistors

Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...
Design-Reuse

A Review Paper on CMOS, SOI and FinFET Technology

In 1958, the first integrated circuit flip-flop was built using two transistors at Texas Instruments. The chips of today contain more than 1 billion transistors. The memory that could once support an ...
Business Wire

X-FAB Sets the Benchmark for Low-Noise CMOS by Reducing Flicker Noise by a Factor of Five with Its New Cost-Effective Transistors on 0.35µm and 0.18µm CMOS Platforms

ERFURT, Germany--(BUSINESS WIRE)--X-FAB Silicon Foundries, the leading More-than- Moore foundry, today announced new transistors that have drastically reduced flicker noise on its mixed-signal 0.35µm ...
EDN

An introduction to semiconductor technologies for power management – Part 2

N-MOS and P-MOS transistors are analogous respectively to NPN and PNP transistors but their conduction mechanism is based completely on one type of carrier: holes for the PMOS and electrons for the ...
EDN

An introduction to analog circuit design* Part 1: Transistors and Elementary Circuits

Modern circuit design is a “mixed signal” endeavor thanks to the availability of sophisticated process technologies that make available bipolar and CMOS (Complementary Metal Oxide Semiconductor), ...
Business Wire

X-FAB Expands CMOS Optical Sensors Portfolio with Industry’s First 4-Transistor Image Sensor Process for High-Speed Applications Requiring Large Pixels

ERFURT, Germany--(BUSINESS WIRE)--X-FAB Silicon Foundries, the leading More-than-Moore foundry, today introduced XS018, the first specialized 0.18µm CMOS process for fast and large image sensor pixels ...
New Electronics

Si MOS quantum dots fabricated on a 300mm CMOS platform

Imec, the research and innovation hub in nanoelectronics and digital technologies, has successfully demonstrate high quality 300mm-Si-based quantum dot spin qubit processing with devices resulting in ...