The converter described below, based on a silicon bipolarjunction transistor (BJT), can operate at as low as 250 mV, which is probably a record for a converter not based on a JFET or germanium ...

Targeting the area of high-voltage, high-switching-frequency applications, this family of ESTB (emitter-switched bipolar transistors) suits industrial three-phase auxiliary power supplies and SEPIC ...

Recently, frequent Design Idea (DI) author Christopher Paul showcased an innovative and high performance true-two-wire current source using a depletion mode MOSFET as the pass device in “A precision, ...

The refurbished electronics market has exploded in 2026, driven by rising new device costs and a growing appetite for sustainability, yet the risk of hidden component failures remains a major concern ...

BJT VCO 4.8V + 2.5V, 4.5-7.8 GHz - IHP 250nm SiGe ...